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Reitoria (REIT)
CIÊNCIAVITAE(em fase de teste)
Luminescence properties of MOCVD grown Al <inf>0.2</inf> Ga <inf>0.8</inf> N layers implanted with Tb
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Luminescence properties of MOCVD grown Al <inf>0.2</inf> Ga <inf>0.8</inf> N layers implanted with Tb
2019
Journal article
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http://hdl.handle.net/10451/49179
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Authors
Rodrigues, J.
Fialho, M.
Magalhães, S.
Lorenz, K.
Alves, E.
Monteiro, T.
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http://hdl.handle.net/10451/49179
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NAno-engineering of wide bandgap Semiconductors using Ion Beams
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10.1016/j.jlumin.2019.02.060
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CIÊNCIAVITAE(em fase de teste)
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