Publication
Measuring strain caused by ion implantation in GaN
| dc.contributor.author | Mendes, P. | en_US |
| dc.contributor.author | Lorenz, K. | en_US |
| dc.contributor.author | Alves, E. | en_US |
| dc.contributor.author | Schwaiger, S. | en_US |
| dc.contributor.author | Scholz, F. | en_US |
| dc.contributor.author | Magalhães, S. | en_US |
| dc.date.accessioned | 2021-07-27T08:57:26Z | |
| dc.date.available | 2021-07-27T08:57:26Z | |
| dc.date.issued | 2019-08 | en_US |
| dc.date.updated | 2021-07-27T08:57:26Z | |
| dc.description.version | N/A | |
| dc.identifier.doi | 10.1016/j.mssp.2019.04.001 | en_US |
| dc.identifier.issn | 1369-8001 | en_US |
| dc.identifier.slug | cv-prod-1304193 | |
| dc.identifier.uri | http://hdl.handle.net/10451/49139 | |
| dc.language.iso | N/A | por |
| dc.relation | NAno-engineering of wide bandgap Semiconductors using Ion Beams | |
| dc.title | Measuring strain caused by ion implantation in GaN | en_US |
| dc.type | journal article | |
| dspace.entity.type | Publication | |
| oaire.awardTitle | NAno-engineering of wide bandgap Semiconductors using Ion Beams | |
| oaire.awardURI | info:eu-repo/grantAgreement/FCT/9471 - RIDTI/PTDC%2FCTM-CTM%2F28011%2F2017/PT | |
| oaire.citation.endPage | 99 | |
| oaire.citation.startPage | 95 | |
| oaire.citation.title | Materials Science in Semiconductor Processing | en_US |
| oaire.citation.volume | 98 | en_US |
| oaire.fundingStream | 9471 - RIDTI | |
| project.funder.identifier | http://doi.org/10.13039/501100001871 | |
| project.funder.name | Fundação para a Ciência e a Tecnologia | |
| rcaap.cv.cienciaid | E910-E432-2AB6 | Katharina Lorenz | |
| rcaap.rights | openAccess | en_US |
| rcaap.type | article | en_US |
| relation.isProjectOfPublication | eebbb165-cfb3-4ae2-8d91-5a812141b1cc | |
| relation.isProjectOfPublication.latestForDiscovery | eebbb165-cfb3-4ae2-8d91-5a812141b1cc |