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Reitoria (REIT)
CIÊNCIAVITAE(em fase de teste)
Measuring strain caused by ion implantation in GaN
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Measuring strain caused by ion implantation in GaN
2019-08
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http://hdl.handle.net/10451/49139
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paper_EMRS_2018_Fall_final.pdf
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Authors
Mendes, P.
Lorenz, K.
Alves, E.
Schwaiger, S.
Scholz, F.
Magalhães, S.
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http://hdl.handle.net/10451/49139
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NAno-engineering of wide bandgap Semiconductors using Ion Beams
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10.1016/j.mssp.2019.04.001
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CIÊNCIAVITAE(em fase de teste)
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