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Unravelling the secrets of the resistance of GaN to strongly ionising radiation

dc.contributor.authorSequeira, Miguel C.en_US
dc.contributor.authorMattei, Jean-Gabrielen_US
dc.contributor.authorVazquez, Henriqueen_US
dc.contributor.authorDjurabekova, Flyuraen_US
dc.contributor.authorNordlund, Kaien_US
dc.contributor.authorMonnet, Isabelleen_US
dc.contributor.authorMota-Santiago, Pabloen_US
dc.contributor.authoret al.en_US
dc.date.accessioned2021-07-22T22:26:25Z
dc.date.available2021-07-22T22:26:25Z
dc.date.issued2021-03-12en_US
dc.date.updated2021-07-22T22:26:21Z
dc.description.versioninfo:eu-repo/semantics/publishedVersion
dc.identifier.doi10.1038/s42005-021-00550-2en_US
dc.identifier.issn2399-3650en_US
dc.identifier.slugcv-prod-2521323
dc.identifier.urihttp://hdl.handle.net/10451/49069
dc.language.isoN/Apor
dc.relationNAno-engineering of wide bandgap Semiconductors using Ion Beams
dc.titleUnravelling the secrets of the resistance of GaN to strongly ionising radiationen_US
dc.typejournal article
dspace.entity.typePublication
oaire.awardTitleNAno-engineering of wide bandgap Semiconductors using Ion Beams
oaire.awardURIinfo:eu-repo/grantAgreement/FCT/9471 - RIDTI/PTDC%2FCTM-CTM%2F28011%2F2017/PT
oaire.citation.issue1en_US
oaire.citation.startPage51
oaire.citation.titleCommunications Physicsen_US
oaire.citation.volume4en_US
oaire.fundingStream9471 - RIDTI
project.funder.identifierhttp://doi.org/10.13039/501100001871
project.funder.nameFundação para a Ciência e a Tecnologia
rcaap.cv.cienciaidE910-E432-2AB6 | Katharina Lorenz
rcaap.rightsopenAccessen_US
rcaap.typearticleen_US
relation.isProjectOfPublicationeebbb165-cfb3-4ae2-8d91-5a812141b1cc
relation.isProjectOfPublication.latestForDiscoveryeebbb165-cfb3-4ae2-8d91-5a812141b1cc

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