Measuring strain caused by ion implantation in GaN

Mendes, P.Lorenz, K.Alves, E.Schwaiger, S.Scholz, F.Magalhães, S.2021-07-272021-07-272019-081369-8001http://hdl.handle.net/10451/49139N/AMeasuring strain caused by ion implantation in GaNjournal article2021-07-27cv-prod-130419310.1016/j.mssp.2019.04.001