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Measurement of residual stress in multicrystalline silicon ribbons by a self-calibrating infrared photoelastic method

dc.contributor.authorBrito, M. C.pt
dc.contributor.authorPereira, J. P.pt
dc.contributor.authorMaia Alves, J.pt
dc.contributor.authorSerra, J. M.pt
dc.contributor.authorVallêra, A. M.pt
dc.date.accessioned2010-07-27T08:55:08Z
dc.date.available2010-07-27T08:55:08Z
dc.date.issued2005pt
dc.date.submitted2004-05-13pt
dc.description.abstractThis article reports on a method for the measurement of residual stress in multicrystalline silicon ribbons, based on the infrared photoelastic technique. This self-calibrating method allows the in situ determination of the photoelastic coefficients and can thus be used for any crystal orientation. The method was validated by the experimental determination of the photoelastic coefficient of monocrystalline (100) silicon wafers and by comparison with strain measurements using asymmetrical x-ray diffraction. The distribution of residual stress in multicrystalline silicon ribbons was also measured. The results showed strong evidence for tensile stress in the central region and compressive stress near the edges of the ribbons. Both the measured residual stress and the photoelastic coefficient distributions are correlated to grain boundariespt
dc.formatapplication/pdfpt
dc.identifier.urihttp://hdl.handle.net/10451/1171
dc.language.isoengpt
dc.publisherAmerican Institute of Physicspt
dc.sourceRev. Sci. Instrum. 76, 013901 (2005)pt
dc.subjectMulticrystalline silicon ribbonspt
dc.subjectInfrared photoelastic techniquept
dc.subjectPhotoelastic coefficientspt
dc.titleMeasurement of residual stress in multicrystalline silicon ribbons by a self-calibrating infrared photoelastic methodpt
dc.typejournal article
dspace.entity.typePublication
rcaap.rightsopenAccesspt
rcaap.typearticlept

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